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Graduate Student Seminar -10/28/2016

"The Role of the Dense Amophous Carbon (DAC) Overlayer in Photoresist Etching"

by Adam Pranda

Friday, October 28, 2016 -- 12:00 p.m.
Large Conference Room, 1207 Energy Research Facility

Advisor:  Professor Gottlieb Oehrlein

The plasma etching processes used in the patterning of semiconductor device features involve high energy ion bombardment of photoresist materials. As a result of the ion bombardment, on the surface of the photoresist, a dense amorphous carbon (DAC) layer is formed whose properties define the steady state etching behavior of the photoresist. In my presentation, I will talk about modeling work that is being done to describe the relationship between the DAC layer properties and the etching behavior and how this work is being applied in the development of next generation photoresist materials that will enable smaller feature sizes.

For additional information about the IREAP Graduate Student Seminars, contact Peter Megson.

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