Faculty Directory

EDUCATION

• Ph.D., Electrical Engineering, University of South Carolina, 2014
• M.E., Electrical Engineering, University of South Carolina, 2012
• B.S., Electrical Engineering, University of south Carolina, 2009

BACKGROUND

Kevin M. Daniels is an Assistant Professor in the Department of Electrical and Computer Engineering with a joint appointment at the Institute for Research in Electronics and Applied Physics. Dr. Daniels received his B.S., M.E. and Ph.D. in electrical engineering from the University of South Carolina in 2009, 2012, and 2014, respectively. From 2014 to his start at UMD, Dr. Daniels served as a National Research Council Postdoctoral Fellow residing at the U.S. Naval Research Laboratory (Washington, D.C.). There he investigated the epitaxial growth of wide bandgap materials, like silicon carbide (SiC), for power electronics and two-dimensional epitaxial graphene for high speed communications and sensors.

AWARDS

Professor Daniels is the recipient of the NSF Faculty Early Career Development Award (2021) for his proposal entitled "Real-time, selective gas sensing in complex gas compositions by molecular sieving via robust two-dimensional heterostructures."

Google Scholar

His current research interest include the growth of various metallic, semiconducting and insulating two-dimensional materials, particularly transition metal oxides and dichalcogenides, for environmental and biological sensors and quantum devices. He has co-authored over 45 publications in the fields of material growth, electrochemistry and plasmonics and has his group has given over 30 conference presentations.

ENEE 304 - Introduction to Micro and Nanoelectronics

ENEE 313 - Introduction to Solid State Physics



ENEE 413 - Advanced Electronic Devices



ENEE 416 - Integrated Circuit Fabrication Laboratory

ENEE 419M - Advanced Manufacturing Laboratory

J.1.    Grubišić-Čabo, A., Kotsakidis, J. C., Yin, Y., Tadich, A., Haldon, M., Solari, S., Riley, J., Huwald, E.,  Daniels, K. M., Myers-Ward, R., Edmonds, M. T., Medhekar, N. V., Gaskill, D. K., Fuhrer, M. S., Quasi-freestanding AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface., Frontiers in Nanotechnology 5, 1333127 (2024) https://doi.org/10.3389/fnano.2023.1333127

J.2.    Joint, F., Zhang, K., Poojali, J., Lewis, D.*, Pedowitz, M. *, Jordan, B. *, Prakash, G., Ali, A., Daniels, K., Myers-Ward, R. L., Murphy, T. E., Drew, D. H., Terahertz Antenna Impedance Matched to a Graphene Photodetector. ACS Applied Electronic Materials 6 (6), 4819-4825 (2024). https://doi.org/10.1021/acsaelm.4c00870

J.3.    Lewis, D.*#, Swart, J.,  Pedowitz, M. *, Jordan, B. *, Myers-Ward, R. L., Pennachio, D. J., Hajzus, J. R.,  Daniels, K. M.,# Emission current enhancement from quai-freestanding epitaxial graphene microstructure electron emitters through space layered silicon dioxide. 2D Materials 11(3), 035005 (2024). https://doi.org/10.1088/2053-1583/ad3ce9

J.4.    Pedowitz, M.*#, Lewis, D.*, DeMell, J.*, Pennachio, D. J., Hajzus, J. R., Myers-Ward, R. L., Kim, S., Daniels, K. M.,#. Green growth of mixed valence manganese oxides on quasi-freestanding bilayer epitaxial graphene-silicon carbide substrates. Materials Today Advances 21, 100467 (2024). https://doi.org/10.1016/j.mtadv.2024.100467.

J.5.    Han, J.W., Sai, P., But, D.B. Uykur, E., Winnerl, S., Kumar, G., Chin, M. L., Myers-Ward, R. L., Dejarld, M. T., Daniels, K. M., Murphy, T. E., Knap, W., Mittendorff, M.,  Strong transient magnetic fields induced by THz-driven plasmons in graphene disks. Nat Commun 14, 7493 (2023). https://doi.org/10.1038/s41467-023-43412-x

J.6.    Mazzoni, A.*, Burke, R., Chin, M., Najmaei, S., Dubey, M., Goldsman, N., Daniels, K.# (2022). Comparison of contact metals evaporated onto monolayer molybdenum disulfide. Journal of Applied Physics, 132(22), 224305. http://dx.doi.org/10.1063/5.0124105 10.1063/5.0124105 

J.7.    Lewis, D.*, Jordan, B.*^, Pedowitz, M.*, Pennachio, D. J., Hajzus, J. R., Myers-Ward, R., Daniels, K. M.# (2022). Phonon assisted electron emission from quasi-freestanding bilayer epitaxial graphene microstructures. Nanotechnology, 33(37), 375202. http://dx.doi.org/10.1088/1361-6528/ac7653 10.1088/1361-6528/ac7653 

J.8.    Kim, S.*, Yoo, B., Miller, M.^, Bowen, D., Pines, D. J., Daniels, K. M. # (2022). EGaIn-Silicone-based highly stretchable and flexible strain sensor for real-time two joint robotic motion monitoring. Sensors and Actuators A: Physical, 342, 113659. http://dx.doi.org/10.1016/j.sna.2022.113659 10.1016/j.sna.2022.113659 

J.9.    Han, J. W., Chin, M. L., Matschy, S., Poojali, J., Seidl, A., Winnerl, S., Hafez, H. A., Turchinovich, D., Kumar, G., Myers-Ward, R. L., Dejarld, M. T., Daniels, K. M., Drew, H. D., Murphy, T. E., Mittendorff, M. (2022). Plasmonic Terahertz Nonlinearity in Graphene Disks. Advanced Photonics Research, 3(2), 2100218. http://dx.doi.org/10.1002/adpr.202100218 10.1002/adpr.202100218 

J.10.    Kim, S.*, Ryu, H., Tai, S., Pedowitz, M.*, Rzasa, J. R., Pennachio, D. J., Hajzus, J. R., Milton, D. K., Myers-Ward, R., Daniels, K. M. # (2022). Real-time ultra-sensitive detection of SARS-CoV-2 by quasi-freestanding epitaxial graphene-based biosensor. Biosensors and Bioelectronics, 197, 113803. http://dx.doi.org/10.1016/j.bios.2021.113803 10.1016/j.bios.2021.113803 

J.11.    Kotsakidis, J. C., Currie, M., Grubišić‐Čabo, A., Tadich, A., Myers‐Ward, R. L., DeJarld, M., Daniels, K. M., Liu, C., Edmonds, M. T., Vázquez de Parga, A. L., Fuhrer, M. S., Gaskill, D. K. (2021). Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H‐SiC(0001). Advanced Materials Interfaces, 8(23), 2101598. http://dx.doi.org/10.1002/admi.202101598 10.1002/admi.202101598 

J.12.    Grubišić-Čabo, A., Kotsakidis, J. C., Yin, Y., Tadich, A., Haldon, M., Solari, S., Di Bernardo, I., Daniels, K. M., Riley, J., Huwald, E., Edmonds, M. T., Myers-Ward, R., Medhekar, N. V., Gaskill, D. K., Fuhrer, M. S. (2021). Magnesium-intercalated graphene on SiC: Highly n-doped air-stable bilayer graphene at extreme displacement fields. Applied Surface Science, 541, 148612. http://dx.doi.org/10.1016/j.apsusc.2020.148612 10.1016/j.apsusc.2020.148612 

J.13.    Chin, M. L., Matschy, S., Stawitzki, F., Poojali, J., Hafez, H. A., Turchinovich, D., Winnerl, S., Kumar, G., Myers-Ward, R. L., Dejarld, M. T., Daniels, K. M., Drew, H. D., Murphy, T. E., Mittendorff, M. (2021). Observation of strong magneto plasmonic nonlinearity in bilayer graphene discs. Journal of Physics: Photonics, 3(1), 01LT01. http://dx.doi.org/10.1088/2515-7647/abd7d0 10.1088/2515-7647/abd7d0 

J.14.    Pedowitz, M. D.*^, Kim, S.*, Lewis, D. I.*, Uppalapati, B., Khan, D., Bayram, F., Koley, G., Daniels, K. M. # (2020). Fast Selective Sensing of Nitrogen-Based Gases Utilizing δ-MnO2-Epitaxial Graphene-Silicon Carbide Heterostructures for Room Temperature Gas Sensing. Journal of Microelectromechanical Systems, 29(5), 846-852. http://dx.doi.org/10.1109/jmems.2020.3007342 10.1109/jmems.2020.3007342 

J.15.    Kotsakidis, J. C., Grubišić-Čabo, A., Yin, Y., Tadich, A., Myers-Ward, R. L., DeJarld, M., Pavunny, S. P., Currie, M., Daniels, K. M., Liu, C., Edmonds, M. T., Medhekar, N. V., Gaskill, D. K., Vázquez de Parga, A. L., Fuhrer, M. S. (2020). Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer–SiC(0001) Interface. Chemistry of Materials, 32(15), 6464-6482. http://dx.doi.org/10.1021/acs.chemmater.0c01729 10.1021/acs.chemmater.0c01729 

J.16.    El Fatimy, A., Han, P., Quirk, N., St. Marie, L., Dejarld, M. T., Myers-Ward, R. L., Daniels, K., Pavunny, S., Gaskill, D. K., Aytac, Y., Murphy, T. E., Barbara, P. (2019). Effect of defect-induced cooling on graphene hot-electron bolometers. Carbon, 154, 497-502. http://dx.doi.org/10.1016/j.carbon.2019.08.019 10.1016/j.carbon.2019.08.019 

J.17.    Pavunny, S. P., Myers-Ward, R. L., Daniels, K. M., Shi, W., Sridhara, K., DeJarld, M. T., Boyd, A. K., Kub, F. J., Kohl, P. A., Carter, S. G., Gaskill, D. K. (2019). On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers. Electrochimica Acta, 323, 134778. http://dx.doi.org/10.1016/j.electacta.2019.134778 10.1016/j.electacta.2019.134778 

J.18.    Pennachio, D. J., Ornelas-Skarin, C. C., Wilson, N. S., Rosenberg, S. G., Daniels, K. M., Myers-Ward, R. L., Gaskill, D. K., Eddy, C. R., Palmstrøm, C. J. (2019). Tailoring commensurability of hBN/graphene heterostructures using substrate morphology and epitaxial growth conditions. Journal of Vacuum Science & Technology A, 37(5), 051503. http://dx.doi.org/10.1116/1.5110524 10.1116/1.5110524 

J.19.    Bloos, D., Kunc, J., Kaeswurm, L., Myers-Ward, R. L., Daniels, K., DeJarld, M., Nath, A., van Slageren, J., Gaskill, D. K., Neugebauer, P. (2019). Contactless millimeter wave method for quality assessment of large area graphene. 2D Materials, 6(3), 035028. http://dx.doi.org/10.1088/2053-1583/ab1d7e 10.1088/2053-1583/ab1d7e 

J.20.    Jadidi, M. M., Daniels, K. M., Myers-Ward, R. L., Gaskill, D. K., König-Otto, J. C., Winnerl, S., Sushkov, A. B., Drew, H. D., Murphy, T. E., Mittendorff, M. (2019). Optical Control of Plasmonic Hot Carriers in Graphene. ACS Photonics, 6(2), 302-307. http://dx.doi.org/10.1021/acsphotonics.8b01499 10.1021/acsphotonics.8b01499 

J.21.    Myers-Ward, R. L., Hobart, K. D., Daniels, K. M., Giles, A. J., Tadjer, M. J., Luna, L. E., Kub, F. J., Pavunny, S. P., Carter, S. G., Banks, H. B., Glaser, E. R., Klein, P. B., Feygelson, B. N., Gaskill, D. K. (2018). Processing of Cavities in SiC Material for Quantum Technologies. Materials Science Forum, 924, 905-908. http://dx.doi.org/10.4028/www.scientific.net/msf.924.905 10.4028/www.scientific.net/msf.924.905 

J.22.    DeJarld, M., Campbell, P. M., Friedman, A. L., Currie, M., Myers-Ward, R. L., Boyd, A. K., Rosenberg, S. G., Pavunny, S. P., Daniels, K. M., Gaskill, D. K. (2018). Surface potential and thin film quality of low work function metals on epitaxial graphene. Scientific Reports, 8(1). http://dx.doi.org/10.1038/s41598-018-34595-1 10.1038/s41598-018-34595-1 

J.23.    Kong, W., Li, H., Qiao, K., Kim, Y., Lee, K., Nie, Y., Lee, D., Osadchy, T., Molnar, R. J., Gaskill, D. K., Myers-Ward, R. L., Daniels, K. M., Zhang, Y., Sundram, S., Yu, Y., Bae, S.-h., Rajan, S., Shao-Horn, Y., Cho, K., Ougazzaden, A., Grossman, J. C., Kim, J. (2018). Polarity governs atomic interaction through two-dimensional materials. Nature Materials, 17(11), 999-1004. http://dx.doi.org/10.1038/s41563-018-0176-4 10.1038/s41563-018-0176-4 

J.24.    El Fatimy, A., Nath, A., Kong, B. D., Boyd, A. K., Myers-Ward, R. L., Daniels, K. M., Jadidi, M. M., Murphy, T. E., Gaskill, D. K., Barbara, P. (2018). Ultra-broadband photodetectors based on epitaxial graphene quantum dots. Nanophotonics, 7(4), 735-740. http://dx.doi.org/10.1515/nanoph-2017-0100 10.1515/nanoph-2017-0100 

J.25.    Barker, B. G., Chava, V. S., Daniels, K. M., Chandrashekhar, M. V., Greytak, A. B. (2017). Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy. 2D Materials, 5(1), 011003. http://dx.doi.org/10.1088/2053-1583/aa90b1 10.1088/2053-1583/aa90b1 

Journal Articles Published Prior to Joining UMD

J.26.    Daniels, K. M., Jadidi, M. M., Sushkov, A. B., Nath, A., Boyd, A. K., Sridhara, K., Drew, H. D., Murphy, T. E., Myers-Ward, R. L., Gaskill, D. K. (2017). Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene. 2D Materials, 4(2), 025034. http://dx.doi.org/10.1088/2053-1583/aa5c75 10.1088/2053-1583/aa5c75 

J.27.    Nath, A., Kong, B. D., Koehler, A. D., Anderson, V. R., Wheeler, V. D., Daniels, K. M., Boyd, A. K., Cleveland, E. R., Myers-Ward, R. L., Gaskill, D. K., Hobart, K. D., Kub, F. J., Jernigan, G. G. (2017). Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layer. Applied Physics Letters, 110(1), 013106. http://dx.doi.org/10.1063/1.4973200 10.1063/1.4973200 

J.28.    Daniels, K. M., Obe, A., Daas, B. K., Weidner, J., Williams, C., Sudarshan, T. S., Chandrashekhar, M. (2016). Metal Catalyzed Electrochemical Synthesis of Hydrocarbons from Epitaxial Graphene. Journal of The Electrochemical Society, 163(5), E130-E134. http://dx.doi.org/10.1149/2.0791605jes 10.1149/2.0791605jes 

J.29.    Uddin, M. A., Singh, A., Daniels, K., Vogt, T., Chandrashekhar, M. V., Koley, G. (2016). Impedance spectroscopic analysis of nanoparticle functionalized graphene/p-Si Schottky diode sensors. Japanese Journal of Applied Physics, 55(11), 110312. http://dx.doi.org/10.7567/jjap.55.110312 10.7567/jjap.55.110312 

J.30.    El Fatimy, A., Myers-Ward, R. L., Boyd, A. K., Daniels, K. M., Gaskill, D. K., Barbara, P. (2016). Epitaxial graphene quantum dots for high-performance terahertz bolometers. Nature Nanotechnology, 11(4), 335-338. http://dx.doi.org/10.1038/nnano.2015.303 10.1038/nnano.2015.303 

J.31.    Rana, T., Chandrashekhar, M.V.S., Daniels, K., Sudarshan, T. (2016). SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4). Journal of Electronic Materials, 45(4), 2019-2024. http://dx.doi.org/10.1007/s11664-015-4234-2 10.1007/s11664-015-4234-2 

J.32.    Daniels, K. M., Shetu, S., Staser, J., Weidner, J., Williams, C., Sudarshan, T. S., Chandrashekhar, M. (2015). Mechanism of Electrochemical Hydrogenation of Epitaxial Graphene. Journal of The Electrochemical Society, 162(4), E37-E42. http://dx.doi.org/10.1149/2.0191504jes 10.1149/2.0191504jes 

J.33.    Jadidi, M. M., Sushkov, A. B., Myers-Ward, R. L., Boyd, A. K., Daniels, K. M., Gaskill, D. K., Fuhrer, M. S., Drew, H. D., Murphy, T. E. (2015). Tunable Terahertz Hybrid Metal–Graphene Plasmons. Nano Letters, 15(10), 7099-7104. http://dx.doi.org/10.1021/acs.nanolett.5b03191 10.1021/acs.nanolett.5b03191 

J.34.    Rana, T., Chandrashekhar, M. V., Daniels, K., Sudarshan, T. (2015). Epitaxial growth of graphene on SiC by Si selective etching using SiF4in an inert ambient. Japanese Journal of Applied Physics, 54(3), 030304. http://dx.doi.org/10.7567/jjap.54.030304 10.7567/jjap.54.030304 

J.35.    Coletti, C., Forti, S., Principi, A., Emtsev, K. V., Zakharov, A. A., Daniels, K. M., Daas, B. K., Chandrashekhar, M. V., Ouisse, T., Chaussende, D., MacDonald, A. H., Polini, M., Starke, U. (2013). Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study. Physical Review B, 88(15). http://dx.doi.org/10.1103/physrevb.88.155439 10.1103/physrevb.88.155439 

J.36.    Shetu, S. S., Omar, S. U., Daniels, K. M., Daas, B., Andrews, J., Ma, S., Sudarshan, T. S., Chandrashekhar, M. V. (2013). Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC. Journal of Applied Physics, 114(16), 164903. http://dx.doi.org/10.1063/1.4826899 10.1063/1.4826899 

J.37.    Daniels, K. M., Shetu, S., Staser, J., Weidner, J. W., Williams, C., Sudarshan, T., Chandrashekhar, M.V.S. (2013). Electrochemical Hydrogenation of Dimensional Carbon. ECS Transactions, 58(4), 439-445. http://dx.doi.org/10.1149/05804.0439ecst 10.1149/05804.0439ecst 

J.38.    Daas, B. K., Daniels, K. M., Shetu, S., Sudarshan, T. S., Chandrashekhar, M.V.S. (2012). Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces. Materials Science Forum, 717-720, 633-636. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.633 10.4028/www.scientific.net/msf.717-720.633 

J.39.    Daas, B. K., Nomani, W. K., Daniels, K. M., Sudarshan, T. S., Koley, G., Chandrashekhar, M.V.S. (2012). Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene Using IR Reflection Spectroscopy. Materials Science Forum, 717-720, 665-668. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.665 10.4028/www.scientific.net/msf.717-720.665 

J.40.    Daniels, K. M., Daas, B. K., Srivastava, N., Williams, C., Feenstra, R. M., Sudarshan, T. S., Chandrashekhar, M.V.S. (2012). Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy. Materials Science Forum, 717-720, 661-664. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.661 10.4028/www.scientific.net/msf.717-720.661 

J.41.    Daas, B. K., Omar, S. U., Shetu, S., Daniels, K. M., Ma, S., Sudarshan, T. S., Chandrashekhar, M. V. (2012). Comparison of Epitaxial Graphene Growth on Polar and Nonpolar 6H-SiC Faces: On the Growth of Multilayer Films. Crystal Growth & Design, 12(7), 3379-3387. http://dx.doi.org/10.1021/cg300456v 10.1021/cg300456v 

J.42.    Daniels, K. M., Daas, B. K., Srivastava, N., Williams, C., Feenstra, R. M., Sudarshan, T. S., Chandrashekhar, M. V. (2012). Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies. Journal of Applied Physics, 111(11), 114306. http://dx.doi.org/10.1063/1.4725489 10.1063/1.4725489 

J.43.    Daas, B. K., Daniels, K. M., Sudarshan, T. S., Chandrashekhar, M. V. (2011). Polariton enhanced infrared reflection of epitaxial graphene. Journal of Applied Physics, 110(11), 113114. http://dx.doi.org/10.1063/1.3666069 10.1063/1.3666069 

J.44.    Meyer, D. J., Bass, R., Katzer, D. S., Deen, D. A., Binari, S. C., Daniels, K. M., Eddy, C. R. (2010). Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs. Solid-State Electronics, 54(10), 1098-1104. http://dx.doi.org/10.1016/j.sse.2010.05.024 10.1016/j.sse.2010.05.024 

J.45.    Tedesco, J. L., Jernigan, G. G., Culbertson, J. C., Hite, J. K., Yang, Y., Daniels, K. M., Myers-Ward, R. L., Eddy, C. R., Robinson, J. A., Trumbull, K. A., Wetherington, M. T., Campbell, P. M., Gaskill, D. K. (2010). Morphology characterization of argon-mediated epitaxial graphene on C-face SiC. Applied Physics Letters, 96(22), 222103. http://dx.doi.org/10.1063/1.3442903 10.1063/1.3442903